• resolution down to 10 nm
• substrate size from 10x10 mm² up to 300 mm diameter
• overlay to existing layers within 10 nm
• e-beam field size 500x500 µm²
• stitching correction between e-beam fields below 10 nm
• we accept GDS and other file formats

Access to nano-resolution microscopy:

• Hitachi and Jeol High-resolution Field-Emission-Scanning Electron Microscopes (up to 500,000x magnification) with EDX system for chemical analysis (shown right)
  
• KLA CD-SEM for automated control of critical dimensions across 3in to 8in diameter wafers
• Atomic Force Microscope with sub-atomic resolution
• Optical registration measurement for accurate fitting og multilayer patterns

Access to device fabrication equipment:

• Inductively Coupled Plasma etchers for various materials
• Metal deposition systems including e-beam evaporation and sputter of a wide range of materials
• Wet chemical stations and equipment for high quality spin coating
• Surface profiler, Optical microscopes, etc.

• i-line stepper with 0.36 µm resolution
• enhanced overlay accuracy of
  less than 80 nm
• Automated photoresist track with high uniformity and repeatablity
• Contact aligner lithography with proximity mode option

• on-wafer DC, RF probing up to 110 GHz
• specialized communication device characterization equipment, e.g. load-pull RF power measurements
• optical test equipment for 1.3 and 1.55 µm wavelength fiber-coupled devices